Hamamatsu News 2 / 2017

OPTO-SEMICONDUCTOR PRODUCTS 17 News 2017 Vol. 2 New Specifications Type No. Peak emission wavelength (μm) Spectral half width (nm) Radiant flux (mW) Forward voltage (V) Cutoff frequency (MHz) L13072-0120P 1.2 80 5 1.1 15 L13895-0145P 1.45 120 5 0.9 10 L12509-0155P 1.55 120 3.8 0.8 15 * Measurement condition: I F =50 mA L13072-0120P, L13895-0145P, L12509-0155P Infrared LED L13072-0120P, L13895-0145P, L12509-0155P Academic Res. ND Inspection Industry Security Optical Comms Semicon Prod. Analytical Measurement Drug Discovery Life Science Medical Near infrared LEDs in low-cost bullet-shaped packages suitable for near infrared lighting These high output near infrared LEDs have a peak emission wavelength at 1 μm or higher. Highly reliable metal packages and packages with lens are available in addition to the low-cost bullet-shaped packages. Directivity (Typ. Ta=25 deg. C.) Relative light output (%) Directivity KLEDB0433EB 90° 80° 70° 60° 50° 40° 30° 90° 80° 70° 60° 50° 40° 30° 20° 10° 0° 10° 20° 0 20 40 60 80 100 20 40 60 80 100 Infrared LED Image sensor Application example (Lighting for infrared cameras) Infrared LEDs with large output are used as light sources for infrared camera imaging. These LEDs are arranged around the camera.

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