Hamamatsu News 1 / 2020

20 News 2020 Vol.1 These are 16 ch/46 ch InAsSb photodiode arrays that can detect up to the 5 μm band. Low crosstalk has been achieved by adopting a back-illuminated structure. Photodiode Array with Sensitivity up to the 5 μm Band for Simple Spectrophotometry InAsSb Photovoltaic Detector P15742-016DS/-046DS New OPTO-SEMICONDUCTOR PRODUCTS Differences from previous products Like the InAsSb photovoltaic detector P13243 series, these are an array type with a 5 μm band cutoff wavelength. The wavelength is longer than that of the conventional InGaAs photodiode array G12430-016D/-046D. Features „ „ High sensitivity „ „ 16 ch/46 ch array „ „ Back-illuminated structure: Low crosstalk Applications „ „ Radiation thermometers „ „ Infrared spectrometer Specifications Parameter P15742-016DS P15742-046DS Unit Cooling Non-cooled – Element size 0.45 × 0.7 (× 16 ch) 0.2 × 0.7 (× 46 ch) mm Element pitch 0.5 0.25 mm Cutoff wavelength 5.3 μm Peak sensitivity wavelength 3.5 μm Photosensitivity* 1 7.0 14.6 mA/W Shunt resistance* 2 100 60 kΩ Detectivity* 3 1.0 × 10 9 cm  •  Hz 1/2 /W *1      = p *2     V R =10 mV *3      = p, fc=1200 Hz, Δf=1 Hz

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