Hamamatsu News 1 / 2020
22 News 2020 Vol.1 The G14714-1024DK is an InGaAs linear image sensor designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and a timing gen erator. Charge amplifiers are configured with CMOS transistor array and are bump-bonded to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read out in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. 1024 Pixels, High-speed Line Rate Near Infrared Sensor (0.95 to 1.7 μm) InGaAs Linear Image Sensor G14714-1024DK New OPTO-SEMICONDUCTOR PRODUCTS The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your applica tion from the available four types using external voltage. Features High-speed line rate: 40000 lines/s max. High-speed data rate: 15 MHz max. Selectable from four conversion efficiency types Built-in timing generator Built-in temperature sensor Room temperature operation Applications Foreign object detection Agricultural product inspection Specifications Parameter Specification Unit Pixel size (H ×V ) 12.5 × 12.5 μm Pixel pitch 12.5 μm Number of effective pixels 1024 pixels Spectral response range 0.95 to 1.7 μm Conversion efficiency Cf = 1.25 pF 0.128 μV/e - Cf = 0.13 pF 1.23 Cf = 0.04 pF 4.0 Cf = 0.02 pF 8.0 Dark current* 1 0.5 pA Readout noise* 2 1.2 mV rms Clock frequency 15 max. MHz *1 CE=8.0 μV/e - *2 CE=1.23 μV/e - Spectral response (Typ. Ta = 25 deg. C.) Wavelength (µm) Wavelength (µm) Wavelength (µm) 1 11 10 98765432 14 15 12 13 10 10 10 9 10 11 10 8 2.5 3.0 4.0 3.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 D* (cm∙Hz 1/2 /W) P13243-043MF/-043CF P13243-039MF/-039CF P13243-033MF/-033CF Photosensitivity (A/W) Photosensitivity (mA/W) 1.0 0.8 0.6 0.4 0 0.2 0.8 1.0 1.2 1.4 1.6 1.8
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