Hamamatsu News 1 / 2020

22 News 2020 Vol.1 The G14714-1024DK is an InGaAs linear image sensor designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and a timing gen­ erator. Charge amplifiers are configured with CMOS transistor array and are bump-bonded to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read out in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. 1024 Pixels, High-speed Line Rate Near Infrared Sensor (0.95 to 1.7 μm) InGaAs Linear Image Sensor G14714-1024DK New OPTO-SEMICONDUCTOR PRODUCTS The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your applica­ tion from the available four types using external voltage. Features „ „ High-speed line rate: 40000 lines/s max. „ „ High-speed data rate: 15 MHz max. „ „ Selectable from four conversion efficiency types „ „ Built-in timing generator „ „ Built-in temperature sensor „ „ Room temperature operation Applications „ „ Foreign object detection „ „ Agricultural product inspection Specifications Parameter Specification Unit Pixel size (H ×V ) 12.5 × 12.5 μm Pixel pitch 12.5 μm Number of effective pixels 1024 pixels Spectral response range 0.95 to 1.7 μm Conversion efficiency Cf = 1.25 pF 0.128 μV/e - Cf = 0.13 pF 1.23 Cf = 0.04 pF 4.0 Cf = 0.02 pF 8.0 Dark current* 1 0.5 pA Readout noise* 2 1.2 mV rms Clock frequency 15 max. MHz *1     CE=8.0 μV/e - *2     CE=1.23 μV/e - Spectral response (Typ. Ta = 25 deg. C.) Wavelength (µm) Wavelength (µm) Wavelength (µm) 1 11 10 98765432 14 15 12 13 10 10 10 9 10 11 10 8 2.5 3.0 4.0 3.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 D* (cm∙Hz 1/2 /W) P13243-043MF/-043CF P13243-039MF/-039CF P13243-033MF/-033CF Photosensitivity (A/W) Photosensitivity (mA/W) 1.0 0.8 0.6 0.4 0 0.2 0.8 1.0 1.2 1.4 1.6 1.8

RkJQdWJsaXNoZXIy MjcwMTM=