Hamamatsu News 1 / 2020
23 News 2020 Vol.1 These are CCD area image sensors derived by improving the previous product (S10420-1106N-01), which achieved high-sensitivity in the UV to visible region by employing a back-thinned structure, and adopting a new structure for the photo sensitive area to improve the UV resistance. Differences from the previous product As compared to the previous product (S10420-1106N-01), the sensitivity deterioration after UV light irradiation is Features High Resistance in the UV Region CCD Area Image Sensor S10420-1106NU-01/-1106NW-01 New OPTO-SEMICONDUCTOR PRODUCTS suppressed significantly. Two new types have been added to the lineup: the S10420-1106NU-01, which features improved UV resistance while maintaining the basic characteristics of the previous product, and the S10420-1106NW-01, which features high sensitivity in the vacuum UV region. Features High sensitivity in the UV region (S10420-1106NW-01) High full well capacity Wide dynamic range With anti-blooming function Non-cooled type Driver circuit C11287 (sold separately) available Applications Spectrophotometry Gas chromatography Excimer laser monitor Vacuum UV to UV light monitor Spectral response (typical example, without window) Variation in the spectral sensitivity due to UV light irradiation Quantum efficiency (%) Relative sensitivity (%) Wavelength (nm) Irradiation level (AU) 0 100 80 60 40 20 1200 200 400 600 800 1000 100 Conventional product S10420-1106-01 S10420-1106NU-01 S10420-1106NW-01 30 05 0 100 150 200 110 100 90 80 70 60 50 40 20 10 0 Conventional type S10420-1106NU-01 S10420-1106NW-01 (Typ. Ta = 25 deg. C.) Quantum efficiency (%) Relative sensitivity (%) Wavel ngth (nm) Irradiation lev l (AU) 0 10 80 60 40 20 120 20 40 60 80 10 10 Conventional product S10420-1 06-01 S10420-1 06NU-01 S10420-1 06NW-01 30 05 0 10 150 20 1 0 10 90 80 70 60 50 40 20 10 0 Conventional type S10420-1 06NU-01 S10420-1 06NW-01 (Typ.)
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